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Field programmable array logics (PALs) of C-MOS technology, with a programmable AND array, fixed OR array, not more than 32 inputs and not more than 12 outputs, whether or not with registers, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 19|!x!|39|mm, with not more than 28 connecting pins and bearing:!1!- an identification marking consisting of or including one of the following combinations of figures and letters:!1!16|P|8!1!16|RP|4!1!C|16|L|8!1!C|16|R|8!1!C|16|R|4!1!C|16|R|6!1!C|20|G|10!1!C|22|V|10!1!or!1!- other identification markings relating to devices complying with the abovementioned description!1!2. 82389|||||||||MB 86904CR||NS 32C032||||W 8701!1! Seeks to amend notification No.

Sincerely, Robert B. SwierupskiDirector,National CommoditySpecialist Division, The tariff classification a continuity-resistance tester from the United Kingdom. 80486|||||||||DC 262A|||||NS 32032|||||ST 18R942!1!

177).A copy of the ruling or the control number indicated above should be provided with the entry documents filed at the time this merchandise is imported.

They are a functional unit under Note 3 to Chapter 90 of the HTS.

FP|54|AS|839 SN|54|LS|333 93458!1! f)|MHW|914!1! Figures represent imports to the United States from other countries and exports from the United States to other countries. 22/2022-Customs, dated 30.04.2022 to enable TRQ holders to import gold through IIBX under TRQ mechanism of India-UAE CEPA . or!1!- other identification markings relating to devices complying with the abovementioned description, UV erasable, programmable, read only memories (EPROMs); FLASH E$2PROMS, With a storage capacity exceeding|256|Kbits but not exceeding|4|Mbits, With a processing capacity not exceeding|8|bits, With a processing capacity exceeding|8|bits but not exceeding|16|bits, With a processing capacity exceeding|16|bits but not exceeding|32|bits, Microprocessor with a processing capacity exceeding 16 bits but not exceeding 32 bits, in the form of a monolithic integrated circuit contained in a housing bearing:- an identification marking consisting of or including one of the following combinations of figures and letters:390 Z 50 82C389 MC 68040 PC 604486 86C020 MC 68331 R 2 000/1678201441 Am 29000 MC 68EC020 ST 1893179R2000A CPU 04041871 MC 88110 ST 1893279R3000 CY7C601 NCR 32000 ST 1894180386 DC 262 A NS 32032 ST 18R94280486 DSP 32 C NS 32332 TMS 320M50080501 L 64801 NS 32532 TMS 320M52080960KB MB 86904CR NS 32C032 TMX 320M44082389 MC 68020 PC 601 W 870182596 MC 68030 PC 603or - other identification markings relating to devices complying with the abovementioned description, With a processing capacity exceeding|32|bits, Electrically erasable, programmable, read only memories (E$2PROMs), excluding FLASH E$2PROMs, Microcontrollers (including microcomputers), With a processing capacity not exceeding 4 bits, Microcontroller or microcomputer with a processing capacity of 4bits, Random-access memory of ECL technology (ECL-RAM) with a storage capacity of 16 Kbits and an access time not exceeding 15 ns, in the form of a monolithic integrated circuit, contained in a housing the dimensions of which do not exceed. k)|MHW|820-2!1!!1!

Richard PowellBritish Consulate-GeneralThe British Trade Office845 3rd Avenue, 9th FloorNew York, NY 10022

Bus interface circuit of C-MOS technology, for the management of address signals, comprising a circuit with 4|!x!|2-input AND gates, two buffer circuits, two latch circuits, four independent transceivers, a 256|!x!|4-bit PROM, in the form of a monolithic integrated circuit, contained in a housing the external dimensions of which do not exceed 31|!x!|31|mm, with not more than 84|connecting pins and bearing:!1!- an identification marking consisting of or including combination of figures and letters:!1!FE|3020!1!or!1!- other identification markings relating to devices complying with the abovementioned description, 1.

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Bus interface circuit of AS or ALPS technology, for the management of data flow in the signal lines of the CPU, in the form of a monolithic integrated circuit, contained in a housing the external dimensions of which do not exceed 26|!x!|26|mm, with not more than 68|connecting pins and bearing:!1!- an identification marking consisting of or including one of the following combinations of figures and letters:!1!82|A|205!1!82|A|305!1!82|A|436!1!82|A|442!1!or!1!- other identification markings relating to devices complying with the abovementioned description!1!2. Seeks to amend notification No.

UK Hs Tariff Code of Chapter 85 Electrical Machinery, Equipment & Sound Recorders, Expect fiscal slippage of 0.4% in FY23: Nomura, Stock market update: Stocks that hit 52-week lows on NSE in today's trade, Bombay High Court quashes 13-year-old Enforcement Directorate order against Sterlite Industries, RBI's rupee trade settlement a step towards internationalisation of rupee: Experts, Next pain point for rupee is $79 billion of unhedged debt, No need to be 'overtly' worried about fall in rupee: Eco Affairs Secretary, Indian importers feel the heat as rupee depreciates over 7%, Soaring dollar good for now, but could hurt exporters in long run, RBI selling dollars to meet gaps as exchange-rate fair, Negative news mostly factored in!

Anode cap cable, for use in the manufacture of fly back transformers, Carbon electrodes, carbon brushes, lamp carbons, battery carbons and other articles of graphite or other carbon, with or without metal, of a kind used for electrical purposes, Graphite electrodes of a kind used for electric furnaces, with an apparent density of 1,65 g/cm or more and an electrical resistance of 6.0 ?

Seeks to amend notification No.

Static random-access memory (S-RAM) with a storage capacity of 2|Kbits, superimposed bit-for-bit on an electrically erasable, programmable, read-only memory (E$2PROM), in the form of a monolithic integrated circuit. This ruling is being issued under the provisions of Part 177 of the Customs Regulations (19 C.F.R.

To use this feature, you will need to allow HTS Search in your ad blocking software, or disable it. MB 7118!1!or!1!other identification markings to devices complying with the abovementioned description, Microcontroller or microcomputer of C-MOS technology, with a processing capacity of 8 bits, having a register-to-register architecture, comprising a static random-access memory (S-RAM) with a storage capacity of not more than 12 Kbits and at least a read only memory, non-programmable (ROM) or a programmable, non-erasable, read only memory (PROM) or an UV-erasable, programmable, read only memory (EPROM) or an electrically erasable, programmable, read only memory (E2PROM), with a storage capacity of not more than 256 Kbits,in the form of a monolithic integrated circuit, contained in a housing the bearing:- an identification marking consisting of or including one of the following combinations of figures and letters:370C010 370C052 370C156 370C310 370C352370C756 370C032 370C056 370C250 370C332370C356 370C810 370C050 370C150 370C256370C350 370C732 370C850 370C058 370C358370C758 374C036 73C41 73C42 73C8573C88 73C95 73C161 MC 68HC05P1 MC 68HC05P8or- other identification markings relating to devices complying with the abovementioned description, 1.

the gap between two lines of the same colour at the centre of the screen) of not less than 0,4 mm, Colour cathode-ray tube with a slot mask, equipped with an electron gun and a deflection yoke and with a screen width/height ratio of 4/3 and a diagonal measurement of the screen of not more than 42 cm, Full square curved screen colour cathode-ray tube, equipped with an electron gun and a deflection yoke and with a screen width/height ratio of 4/3|and a diagonal measurement of the screen of 68|cm (|2|mm), Flat screen colour cathode-ray tube with a screen width/height ratio 4/3, a diagonal measurement of the screen of 59 cm or more but not exceeding 61 cm and a curvature radius of 50 m or more, Colour cathode-ray tube equipped with electron guns placed side by side (in-line technology), with a diagonal measurement of the screen of 79 cm or more, Colour cathode-ray tube equipped with an electron gun and a deflection yoke, with a screen width/height ratio of 4/3|and a diagonal measurement of the screen of more than 72|cm, Flat screen colour cathode-ray tube with a screen width/height ratio 4/3, a diagonal measurement of the screen of 79 cm or more but not exceeding 81 cm and a curvature radius of 50 m or more, With a diagonal measurement of the screen exceeding|42|cm but not exceeding|52|cm, With a diagonal measurement of the screen exceeding |52 cm| but not exceeding |72 cm|, Colour cathode-ray tube with a screen width/height ratio of 16/9 and a diagonal measurement of the screen of 39,8 cm (+/-0,3 cm), Colour cathode-ray tube with a diagonal measurement of the screen of 85,5 cm or more, With a diagonal measurement of the screen exceeding|72|cm, With a diagonal measurement of the screen exceeding|52|cm, Other, with a diagonal measurement of the screen, Colour cathode-ray tube with a diagonal measurement of the screen of 85,5|cm or more, With a diagonal measurement of the screen not exceeding|52|cm, Flat screen monochrome cathode-ray tube with a diagonal measurement of the screen of 100 mm or more but not exceeding 155 mm and an anode voltage of 5 kV or more but not exceeding 32 kV, Monochrome cathode-ray tube with a diagonal measurement of the screen of 250 mm or more but not exceeding 320 mm and an anode voltage of 18 kV or more but not exceeding 22 kV, Monochrome cathode-ray tube, with a diagonal measurement of the screen of 150 mm or more but not exceeding 182 mm, a neck diameter of less than 30 mm and an anode voltage of 25 kV or more but not exceeding 32 kV, Flat screen monochrome cathode-ray tube, with a diagonal measurement of the screen not exceeding 102 mm, Flat screen monochrome cathode-ray tube with a diagonal measurement of the screen of 150|mm or more but not exceeding 155|mm, and an anode voltage of 25|KV or more but not exceeding 32|kV, Television camera tubes; image converters and intensifiers; other photocathode tubes, Photomultiplier consisting of a photocathode tube with 9|or 10|dyodes, for light of a wavelength of 160|nm or more but not exceeding 930|nm, of a diameter not exceeding 14|mm and a height not exceeding 94|mm, Photomultiplier consisting of a photocathode tube with 9 dynodes, for light of a wavelength of 160 nm or more but not exceeding 930 nm, of a diameter not exceeding 14 mm and a height not exceeding 94 mm, Cathode-ray tubes with a memory (direct view storage tubes) for the reproduction of alphanumeric and analogue data, equipped with a scanning device, for reading the images. FP|74|AS|839 SN|54|LS|335 82|S|100!1! 486||||||||||86C020|||||||MC 68040||||R 2000/16!1! 50/2017-Customs for DEC tablet and S. No. New Delhi - 110020, India 10/2019- Central Tax, Seeks to amend notification No. ". 404 Petrol operations. e)|SHW|5115!1!

1,05 mm, Multilayer ceramic dielectric capacitor, contained in a housing of the SMD (Surface mounted device) type the exterior dimensions of which do not exceed 0,55 !x! NYRL B86452, 6-19-97, noted.

5/2017- Central Tax (Rate), Seeks to amend notification No. j)|PHW|5113!1!

a)|MHW|9002!1!

C/o InfodriveIndia Pvt Ltd No sample was received, but the flyer describes a typical use as follows: c)|PF|0144!1!

Our market research report and Ukraine export statistics of electric tester covers market share of Ukrainian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc.

perfectly and study market size of sunglass in Ukraine. SN|74|LS|335 SN|74|LS|336!1! 6 !x! HTS Search supports the following functionality: Any word or phrase in quotes is matched exactly.For 82596|||||||||MC 68020||||PC 601!1! Control circuit of C-MOS technology for dynamic random-access read/write memories (D-RAMs), with an address buffer for upper address-bits, a memory decoder and a speaker controller, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed|31|!x!|31|mm, with not more than|84|connecting pins and bearing :!1!- an identification marking consisting of or including the following combination of figures and letters :!1!82|C|102!1!or!1!- other identification markings relating to devices complying with the abovementioned description, 1.

or!1!

g)|PF|0146!1! 80960KB|||||||L 64801|||||NS 32532|||||TMS 320M520!1!

2/2022- Central Tax (Rate), Seeks to amend notification No. The general rate of duty will be 1.7 percent ad valorem. Import Rank (amongst 6 digit HS Codes), U.S. !1!or!1!- other identification markings relating to devices complying with the abovementioned description!1!

Static random-access memory (S-RAM) with a storage capacity of 4|Kbits, superimposed bit-for-bit on an electrically erasable, programmable, read-only memory (E$2PROM), in the form of a monolithic integrated circuit, Static random-access memory (S-RAM) with a storage capacity of 1|Kbit, superimposed bit-for-bit on an electrically erasable, programmable, read-only memory (E$2PROM), in the form of a monolithic integrated circuit,abovementioned description. HM|50464 PD|41256 M5M|4464!1! Bus interface circuit of C-MOS technology, for address/data management of 8, 16 or 32|bits between a central processing unit (CPU) and peripheral units, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 30|!x!|30|mm, with not more than 84|connecting pins or contact areas and bearing:!1!- an identification marking consisting of including the following combination of figures and letters:!1!344|S|0606!1!or!1!- other identification markings relating to devices complying with the abovementioned description!1!2.

80501|||||||||DSP 32 C||||NS 32332|||||TMS 32OM500!1! - an identification marking consisting of or including one of the following combination of figures and letters:!1!TC5564PL-15&&&&&HM6264P-10&&&&&&MB8464A-10&&&&&PD4464C-15!1!TC5564PL-20&&&&&HM6264P-12&&&&&&MB8464A-10L&&&&PD4464C-20!1!TC5565PL-12&&&&&HM6264P-15&&&&&&MB8464A-10LL&&&PD4464G-15!1!TC5565PL-15&&&&&HM6264LP-10&&&&&MB8464A-15&&&&&PD4464G-20!1!TC5565FL-12&&&&&HM64LP-12&&&&MB8464A-15L!1!TC5565FL-15&&&&&HM6264LP-15&&&&&MB8464A-15LL!1!TC5565PL-12L&&&&HY6264P-15&&&&&&MB8464A-12!1!TC5565PL-15L&&&&KM6264AL-10&&&&&MB8464-12L!1!TC5565FL-12L&&&&&&&&&&&&&&&&&&&&MB8464-12LL!1!TC5565FL-15L&&&&&&&&&&&&&&&&&&&&MB8464-15!1!&&&&&&&&&&&&&&&&&&&&&&&&&&&&&&&&MB8464-15L!1!&&&&&&&&&&&&&&&&&&&&&&&&&&&&&&&&MB8464-15LL!1!TMM|2063|P-10!1!TMM|2063|P-12!1!TMM|2063|P-15!1!MSM|5165|AL-12!1!MSM|5165|AL-15!1!or!1!other identification markings relatins to devices complying with the abovemenioned description, Programmable, non-erasable, read-only memories (PROMs) of Schottky TTL technology, with a storage capacity of 2|K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17|x 39|mm, with not more than 24|connecting pins or contact areas, and bearing :!1!an identification marking either consisting of one of the following combinations of figures or figures and letters or including one of those combinations :!1!27 S 12 5305 6305 76 LS 03!1!27 S 13 5306 6306 7620!1!

!1!c)|PHW|902!1! Phone : 011 - 40703001.

51 !x! Static, read/write, random-access memories of N-MOS (including H-MOS) technology(N-MOS S-RAMs, Microcontroller or microcomputer of C-MOS technology, with a processing capacity of 8 bits,888CF MB 89152 COP 888EGor - other identification markings relating to devices complying with the abovementioned description, Non-volatile memory consisting of a static random-access memory of C-MOS technology (C-MOS S-RAM),with a storage capacity, Microcontroller or microcomputer of N-MOS (including H-MOS) technology, with a processing capacity of 8|bits, the abovementioned description, Static cache memory of C-MOS technology, with a storage capacity of|16|K|!x!|16|bits, in the form of a monolithic, Static random-access cache memory (S-Cache-RAM) of C-MOS technology, with a abovementioned description. Colour cathode-ray tube with a dot mask, equipped with electron guns in a triangular fashion (delta technology), with a diagonal screen measurement of 66|cm or more, Colour cathode-ray tube with a dot mask, equipped with electron guns placed side by side (in-line technology), with a distance of less than 0,45|mm between colour dots and without internal magnetic screen, Colour cathode-ray tube with a dot mask, equipped with electrron guns placed side by side (in-line technology), with a distance of less than 0,45|mm between colour dots and having a diagonal measurement of the screen not exceeding 54|cm, Colour cathode-ray tube with a dot mask, equipped with 3 electron guns placed side by side (in-line technology) 1 gun with 3 rays, having a diagonal measurement of the screen not exceeding 72|cm, Colour cathode-ray tube with a slit mask, having a distance between stripes of the same colour of less than 0,35 mm and a diagonal measurement of the screen not exceeding 53 cm, Colour cathode-ray tube with a slit mask, having a distance between stripes of the same colour of less than 0,39 mm and a diagonal measurement of the screen of 33 cmm or more but not exceeding 38 cm, Monochrome cathode-ray tube with a diagonal measurement of the screen of 310 mm or more but not exceeding 390 mm, Data/graphic display tubes, colour, with a phosphor dot screen pitch smaller than 0,4 mm, Colour cathode-ray tube with a dot mask, equipped with 3 electron guns placed side by side (in-line technology) or 1 gun with 3 rays, having a diagonal measurement of the screen not exceeding 72 cm, Colour cathode-ray tube with a slit or slot mask, having a distance between stripes of the same colour of less than 0,35 mm and a diagonal measurement of the screen not exceeding 53 cm, Colour cathode-ray tube with a slit or slot mask, having a distance between stripes of the same colour of less than 0,39 mm and a diagonal measurement of the screen of 33 cm or more but not exceeding 38 cm, Colour cathode-ray tube with a slit or slot mask, having a distance between stripes of the same colour of less than 0,35 mm and a diagonal measurement of the screen not exceeding 72 cm, for use in the manufacture of monitors, Colour cathode-ray tube with a slit or slot mask, having a distance between stripes of the same colour of less than 0,30 mm and a diagonal measurement of the screen not exceeding 58 cm, Microwave tubes (for example, magnetrons, klystrons, travelling wave tubes, carcinotrons), excluding grid-controlled tubes, Magnetrons with a power output of not more than 1 000 W, for the manufacture of microwave ovens, Data/graphic display tubes, black and white or other monochrome, Monochrome cathode-ray tube with a diagonal measurement of the screen of 176 mm or more but not exceeding 520 mm and a neck diameter not exceeding 21 mm, Continuous wave magnetron with a fixed frequency of 2|460 MHz, packaged magnet, probe output, for use in the manufacture of products falling within subheading 8516|50|00, Electron gun, for use in the manufacture of colour cathode-ray tubes of subheading 8540|40|00 with a diagonal measurement of the screen of 34|cm or more but not exceeding 39|cm, Electron gun of colour cathode-ray tubes with an anode voltage of 27,5 kV or more but not exceeding 36 kV, Flat masks of a length of 685,6 mm (+/- 0,2 mm) or 687,2 mm (+/- 0,2 mm) and a height of 406,9 mm (+/- 0,2 mm) or 408,9 mm (+/- 0,2 mm), with a width of the slots at the end of the central vertical axe of 174 micrometer (+/- 8 micrometer), Flat masks, with a length of 597.1 mm (0.2 mm) and a height of 356.2 mm (0.2 mm), with a width of the slots at the end of the central vertical axe of 179.1 m (9), Metal anode button to enable electrical contact with the anode inside the colour picture tube, Deflector yoke for cathode-ray tubes with an operating frequency of 31|250 Hz or more but not exceeding 64|000 Hz, incorporating a quadripolar magnet, Tungsten elements coated with insulating material, grids and cathodes for use in the manufacture of electron guns for monochrome cathode-ray tubes, Slit mask, consisting of vertical slits with a distance between slits of 0,74 mm (+/-0,12 mm) and a diagonal dimension of either 61,5 cm (+/-0,5 cm) or 71 cm (+/-0,5 cm) or 79,5 cm (+/-0,5 cm), Slit or slot mask, excluding masks with continuously vertical slits, with a diagonal measurement of 69|cm or less, Electron gun for the production of monochrome cathode-ray tubes with a diagonal measurement of the screen of 7,6 cm or more but not exceeding 30,5 cm, Deflector yoke for colour cathode-ray tubes, with an operating frequency of 15|625 or 31|250 Hz, comprising 2 two-pole ring magnets, 2 four-pole ring magnets and 2 six-pole ring magnets, Molybdenum chrome steel frames for the manufacture of 533,4 mm (+/- 1,0 mm) (21 inches), 635,0 mm (+/- 1,0 mm) (2,5 inches) or 736,6 mm (+/- 1,0mm) (29 inches) cathode-ray tubes, Molybdenum chrome steel frames for the manufacture of 736,6 mm (+/-1,0 mm) (29 inches), Dot mask with a diagonal measurement of 39 cm (+/- 0,5 cm), Slit or slot mask ("shadow mask"), excluding masks with continuously vertical slits, with a diagonal measurement of 697.5|mm or more, but not more than 782.9|mm, Assembly for cathode-ray tubes with 2 or more but not more than 6 coils, a plastic support and a metal fixing ring, for the adjustment of display sharpness and/or convergence, Flat masks with a diagonal measurement of 31,5 cm (+/- 0,5 cm), 34 cm (+/- 0,5 cm), or 39 cm (+/- 0,5 cm), Slit mask, consisting of continuously vertical slits measuring more than 275 mm in the length, Frame of molybdenum chrome steel, for use in the manufacture of cathode-ray tubes, Anode, cathode or output part, or an assembly comprising these components (magnetron core tube), for the manufacture of magnetrons of subheading 8540|71|00, Diodes, transistors and similar semiconductor devices; photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes; mounted piezoelectric crystals, Diodes, other than photosensitive or light-emitting diodes, Silicon power rectifier diodes of planar technology, with a recovery time of less than 100 ns, a maximum recurring reverse voltage of 200 V, and average forward current of 2,5 A or more, contained in a housing, Voltage rectifier diode, with a reverse peak voltage of 6, 8, 10, 12 or 14 kV, an average forward current of 5 mA and a reverse current of 2 ?A, contained in a housing, Germanium-gold diodes with forward voltage not exceeding 1|V at 5|mA, Current regulative diode, providing a stabilized current level not exceeding 18 mA at a voltage of 10 V, Diode, with a forward current not exceeding 1 A, a resistance not exceeding 1,5 Ohm, a total capacitance not exceeding 0,3 pF and a breakdown voltage of 200 V or more, Transistors, other than photosensitive transistors, High electron mobility transistor (HEMT), for frequencies of 2 GHz or more but not exceeding 20 GHz, with a dissipation rate not exceeding 180 mW, contained in a housing with a diameter not exceeding 3 mm, with not more than 4 connections, Field-effect transistor (FET) for frequencies of 2 GHz or more but not exceeding 16 GHz, with a dissipation rate not exceeding 225 mW, contained in a housing with a diameter not exceeding 3 mm, with not more than 4 connections, Insulated gate bipolar transistors (IGBTs), Transistor with thermal overload protection, having a collector-emitter operating voltage not exceeding 42 V, contained in a housing with not more than 4 connections, Transistor with an output power not exceeding 30 W at a voltage of 12,5 V, contained in a housing with not more than 8 connections, Transistor with thermal overload protection, having a collector-emitter operating voltage not exceeding 42|V, contained in a housing with not more than 4 connections, Transistor with an output power not exceeding 30|W at a voltage of 12,5|V, contained in a housing with not more than 8|connections, Thyristors, diacs and triacs, other than photosensitive devices, Diac, with a breakover voltage of 77 V or more but not exceeding 270 V and a state current not exceeding 1 A, contained in a housing, Diac, with a breakover voltage of 65 V or more and a capacitance of 200 pF, contained in a housing, Photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes, Light-emitting diodes, including laser diodes, Light-emitting diode (LED), made from aluminium-gallium-arsenic (AlGaAs) semiconductor, having a square base with an edge length not exceeding 8,2|mm, having a primary lens, Light-emitting diode (LED) of Transparent Substrate (TS) technology, made from aluminium-gallium-arsenic (AlGaAs) semiconductor, having a luminous intensity of 1,4 candels or more at 20|mA, Light-emitting diode, having a square base with an edge length not exceeding 8,2 mm or contained in a housing having an external diameter not exceeding 6 mm, having a lens, Light-emitting diode of Transparent Substrate (TS) technology, made from aluminium-gallium-arsenid (AlGaAs) semiconductor material, having a luminous intensity of 1,4 candela or more at 20 mA, Light-emitting diode, contained in a housing of the SMD (Surface mounted device) type, Light-emitting diode, made from silicon-carbid (SiC) semiconductor material, operating at a nominal wavelength of 481 nm, Solar cells whether or not assembled in modules or made up into panels, Module consisting of not more than 5 solar cells of thin-film technology, on a substrate the exterior dimensions of which do not exceed 18|!x!|70|mm, Photodiodes, phototransistors, photothyristors or photocouples, Polarised ceramic piezo-electric crystal oscillating in a frequency range of 500 kHz or more but not exceeding 12|500 kHz, contained in a housing the exterior dimensions of which do not exceed 14 !x!

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